Название
Категория | Описание
Упаковка | Склад, (шт) | Цена, (бел.руб) | Добавлен | Количество | В корзину |
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транзистор MRF134 (2006г.)
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(5,0 W, to 400 MHz, N–Channel MOS Broadband RF Power FET)
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18
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267,58
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27.03.2024 14:30:32
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транзистор IRFRC20 (2006г.)
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(IR - Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A), D-Pak)
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1
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3,77
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27.03.2024 14:30:32
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транзистор IRF2807S (2006г.)
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(IR - N-Ch HEXFET® Power MOSFET, Vdss=75V, Rds(on)=13mOhm, 82A, D2Pak)
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49
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9,42
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27.03.2024 14:30:32
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транзистор IRFBC40ASPBF (2006г.)
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(Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A), D2Pak, IR)
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15
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5,65
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27.03.2024 14:30:32
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транзистор MRF455 (2006г.)
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(The RF Line NPN Silicon Power Transistor, 60W, 30MHz, 12,5V, M/A-COM)
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33
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367,92
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27.03.2024 14:30:32
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транзистор MRF553 (2006г.)
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(Microsemi - RF Microwave Discrete Low Power Transistor)
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101
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18,48
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27.03.2024 14:30:32
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транзистор MRF9045LR1 (2006г.)
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(Freescale - N-Ch Enhancement-Mode Lateral MOSFETs)
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1
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259,02
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27.03.2024 14:30:32
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транзистор IRF9610PBF (2006г.)
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(IR - Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A), TO-220AB)
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590
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3,53
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27.03.2024 14:30:32
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транзистор MRF134 (луж.) (2006г.)
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(5,0 W, to 400 MHz, N–Channel MOS Broadband RF Power FET, M/A-COM)
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21
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147,17
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27.03.2024 14:30:32
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транзистор MRF141G (2005, 2006г.)
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(M/A-COM - RF Power FET 300W, 175MHz, 28V)
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134
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1287,79
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27.03.2024 14:30:32
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транзистор MRF455 (луж.) (2006г.)
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(The RF Line NPN Silicon Power Transistor, 60W, 30MHz, 12,5V, M/A-COM)
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255
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184,02
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27.03.2024 14:30:32
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дроссель RFB1010-222L-2,2 мкГн-10%-0.41А (2006г.)
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(COILCRAFT-Low cost, high current power inductor 2.2 uH)
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2000
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7,71
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27.03.2024 14:30:32
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MRF134 (луж.) (2006г.)
транзистор
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(5,0 W, to 400 MHz, N–Channel MOS Broadband RF Power FET, M/A-COM)
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21
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169,41
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02.08.2023 15:01:21
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MRF141G (2005, 2006г.)
транзистор
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(M/A-COM - RF Power FET 300W, 175MHz, 28V)
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147
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1481,98
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02.08.2023 15:01:21
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MRF455 (луж.) (2006г.)
транзистор
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(The RF Line NPN Silicon Power Transistor, 60W, 30MHz, 12,5V, M/A-COM)
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255
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211,79
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02.08.2023 15:01:21
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RFB1010-222L-2,2 мкГн-10%-0.41А (2006г.)
дроссель
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(COILCRAFT-Low cost, high current power inductor 2.2 uH)
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2000
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8,67
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02.08.2023 15:01:21
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MRF134 (2006г.)
транзистор
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(5,0 W, to 400 MHz, N–Channel MOS Broadband RF Power FET)
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18
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308,90
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02.08.2023 15:01:21
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IRFRC20 (2006г.)
транзистор
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(IR - Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A), D-Pak)
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1
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4,34
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02.08.2023 15:01:21
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IRFP360 (2006г.)
транзистор
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(IR - Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A), TO-247)
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2
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26,77
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02.08.2023 15:01:21
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IRFBC40ASPBF (2006г.)
транзистор
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(Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A), D2Pak, IR)
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15
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6,50
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02.08.2023 15:01:21
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