Название Категория | Описание Упаковка | Склад, (шт) | Цена, (бел.руб) | Добавлен | Количество | В корзину |
|
SH-200 В-4,7 мкФ (10х12) (105°C) Yageo
|
|
120
|
0,44
|
14.07.2026 8:56:48
|
|
|
|
MKPH-SH 630 B~ (1200 В=) 0,15 мкФ 5% (J) 50 кГц
|
|
3
|
22,23
|
14.07.2026 8:56:48
|
|
|
|
BYV28-200 Vishay
|
|
48
|
5,56
|
14.07.2026 8:56:48
|
|
|
|
SH-085-0,125 Вт-200 кОм (аналог СП3-38Б) 20%
|
|
495
|
1,67
|
14.07.2026 8:56:48
|
|
|
|
WH-63 В-2200 мкФ (18x40), (105°C) Aishi
|
|
24
|
16,67
|
14.07.2026 8:56:48
|
|
|
|
TA8200AH Toshiba
|
|
2
|
16,67
|
14.07.2026 8:56:48
|
|
|
|
TD62004F Toshiba
|
|
43
|
6,45
|
14.07.2026 8:56:48
|
|
|
|
2SC5200 Toshiba
|
|
5
|
50,02
|
14.07.2026 8:56:48
|
|
|
|
S2000A1 Toshiba
|
|
4
|
14,45
|
14.07.2026 8:56:48
|
|
|
|
S2000N Toshiba
|
|
3
|
13,34
|
14.07.2026 8:56:48
|
|
|
|
QM200DY-H Mitsubishi Electric
|
М
|
1
|
720,27
|
13.07.2026 15:25:49
|
|
|
|
ECAP 2200/100v 2240 SH 105C (KSH228M100S1A5Q40K)
|
Teapo
|
10
|
13,27
|
13.07.2026 13:29:40
|
|
|
|
QM200DY-2H (MITSUBISHI)
|
|
1
|
963,39
|
13.07.2026 13:24:51
|
|
|
|
MG200Q1JS9 (TOSHIBA)
|
|
1
|
973,22
|
13.07.2026 13:24:51
|
|
|
|
ДШИ-200-1-1(аналог 4SHG-023A 39C) 1.8*/st 2.3v
|
|
10
|
137,63
|
13.07.2026 11:29:36
|
|
|
|
KSH200TF (2000г.)
|
(NPN Epitaxial Silicon Transistor, 25v, 5a, D-PAK)
|
1795
|
1,47
|
13.07.2026 10:58:51
|
|
|
|
VS-HFA08TB120-M3 (2004г.) (Vishay)
|
(Ultrafast, Soft Recovery Diode, If(av)=8a, Vr=1200v, trr=28ns, TO220)
|
96
|
9,34
|
13.07.2026 10:58:51
|
|
|
|
AT24C04BN-SH-T (2008г.)
|
(Atmel - Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8), so-8)
|
1376
|
2,16
|
13.07.2026 10:58:51
|
|
|
|
TSH71CDT (2009г.)
|
(STM- LOW POWER OPERATIONAL AMPLIFIERWITH STANDBY FUNCTION, so-8)
|
100
|
9,83
|
13.07.2026 10:58:51
|
|
|
|
AM6TW-4805SH35Z (2007г.)
|
(AIMTEC - DC/DC конвертер, 6Вт, Uвх=18...72в, Вых: 5в, 1,2а)
|
89
|
127,31
|
13.07.2026 10:58:51
|
|
|
|