Название Категория | Описание Упаковка | Склад, (шт) | Цена, (бел.руб) | Добавлен | Количество | В корзину |
|
MX25L1606EM2I-12G (2018г.)
|
Микросхема (MXIC-16M-BIT [x 1 / x 2] CMOS SERIAL FLASH, SOP-8)
|
92
|
2,75
|
08.04.2025 15:06:31
|
|
|
|
MX25L1606EM2I-12G (2019г.)
|
Микросхема (MXIC-16M-BIT [x 1 / x 2] CMOS SERIAL FLASH, SOP-8)
|
184
|
2,75
|
08.04.2025 15:06:31
|
|
|
|
MX25L1606EM2I-12G(TR) (2017г.)
|
Микросхема (MXIC-16M-BIT [x 1 / x 2] CMOS SERIAL FLASH, SOP-8)
|
80
|
2,75
|
08.04.2025 15:06:31
|
|
|
|
MX25L25635EMI-12G
|
Микросхема (MXIC-256MBit [x1/x 2/x 4] CMOS MXSMIO® Flash Memory, SO-16)
|
176
|
43,22
|
08.04.2025 15:06:31
|
|
|
|
SEMiX302GB12E4s
|
транзистор (SEMIKRON - Semix®2s Trench IGBT Modules, Ic=463A, Vces=1200V)
|
12
|
528,22
|
08.04.2025 15:06:31
|
|
|
|
BG06-31/P05LA32-G/EMV-SP 0.18квт 3200об/м, 17,1Н*м
|
|
1
|
3501,47
|
08.04.2025 14:43:31
|
|
|
|
KF2002-GF45B (EM48N-7059 Ver A) термоголовка
|
19 SHEC з/уп, 40
|
1960
|
50,02
|
04.04.2025 12:10:22
|
|
|
|
MGF4319G-01 super-low-noise InGaAs HEMT transistor 12GHz 12dB 4V 60mA 50mW
|
б/г Mitsubishi в пленке
|
14
|
15,01
|
04.04.2025 12:10:22
|
|
|
|
CS3702GO SEMICE SO28
|
|
|
17,61
|
04.04.2025 9:31:43
|
|
|
|
MC3371DR2G ONSEMI SO16
|
|
|
15,31
|
04.04.2025 9:31:43
|
|
|
|
MP1472GJ Monolithic Power Systems TSOT-23-8
|
|
|
8,60
|
04.04.2025 9:31:43
|
|
|
|
NCP5104DR2G ONSEMI SOP8
|
|
|
18,01
|
04.04.2025 9:31:43
|
|
|
|
HT9302G Holtek Semiconductor Inc. DIP16
|
|
|
17,21
|
04.04.2025 9:31:43
|
|
|
|
NCP1239JD65R2G ON Semiconductor SOIC-7
|
|
|
19,31
|
04.04.2025 9:31:43
|
|
|
|
NCP1654BD65R2G ON Semiconductor SO-8
|
|
|
17,81
|
04.04.2025 9:31:43
|
|
|
|
1N5402 Galaxy Semiconductor DO-27
|
|
|
1,10
|
04.04.2025 9:31:43
|
|
|
|
2N7002 Galaxy Semiconductor SOT-23
|
|
|
1,10
|
04.04.2025 9:31:43
|
|
|
|
25L3206EM2I-12G MXIC SOP-8
|
|
|
9,10
|
04.04.2025 9:31:43
|
|
|
|
MX25L1606EM2I-12G MXIC SOP8
|
|
|
5,50
|
04.04.2025 9:31:43
|
|
|
|
MX25L6406EMI-12G Macronix SOP-16
|
|
|
11,70
|
04.04.2025 9:31:43
|
|
|
|